Demonstration of 2kV SiC Deep-Implanted Super-Junction PiN Diodes
نویسندگان
چکیده
We report successful demonstration of 2kV, SiC super-junction (SJ) PiN diodes formed by deep implantation Al and N. In our devices, alternating 12μm n-type p-type SJ pillars fabricated on a 10μm pitch result in diode with measured blocking voltage 500V higher than comparable non-SJ diodes. Four activation anneals ranging from 1700 °C to 2000 were compared for effectiveness eliminating post-implant lattice damage, the optimum anneal condition was identified.
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ژورنال
عنوان ژورنال: Materials Science Forum
سال: 2022
ISSN: ['1422-6375', '0250-9776', '0255-5476', '1662-9752', '1662-9760']
DOI: https://doi.org/10.4028/p-b1gfac